Aluminum nitride ceramics and a member used for the production of semiconductors

ABSTRACT

The object of the present invention is to provide an aluminum nitride ceramics having a low volume resistivity at room temperature and a relatively low content of samarium. An aluminum nitride ceramics contains aluminum nitride as a main component and samarium in a converted content calculated as samarium oxide of 0.060 mole percent or lower. Aluminum nitride particles and samarium-aluminum composite oxide phase having a length of 7 micrometer or more are formed therein. Alternatively, an aluminum nitride ceramics contains aluminum nitride as a main component and samarium in a converted content calculated as samarium oxide of 0.060 mole percent or lower. Aluminum nitride particles and the aluminum nitride particles has a mean grain diameter of 5 μm or more are formed therein.

[0001] This application claims the benefits of Japanese Patent Applications P2002- 330707, filed on Nov. 14, 2002 and P2003- 324312, filed on Sep. 17, 2003, the entireties of which are incorporated by reference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The invention relates to an aluminum nitride ceramics and a member for use in the production of semiconductors.

[0004] 2. Related Art Statement

[0005] An electrostatic chuck system utilizing Johnson-Rahbek effect is useful for the adsorption and retention of semiconductor wafers. In such system, the volume resistivity of the substrate of the chuck may preferably be 10⁸ to 10¹³Ω·cm for improved adsorption force and speed of response. It is therefore desirable to control the volume resistivity of the substrate within 10⁸ to 10¹³Ω·cm in a temperature range intended for use, in the development of an electrostatic chuck.

[0006] The applicant filed a Japanese patent publication No. 9-315867A and disclosed that the volume resistivity of aluminum nitride with a high purity may be adjusted to 10⁸ to 10¹³Ω·cm at room temperature by adding a small amount of yttrium oxide thereto.

[0007] Japanese patent publication No. 63-46032A discloses a process for producing an aluminum nitride sintered body. According to the claim 1, aluminum nitride powder containing 1 weight percent of oxygen is mixed with 0.01 to 15 weight percent of the oxide of a metal element selected among yttrium, lanthanum, praseodymium, niobium, samarium, gadolinium and dysprosium to obtain mixed powder. The powder is then shaped and sintered to obtain an aluminum nitride sintered body having a high thermal conductivity and containing 0.01 to 20 weight percent of oxygen. According to “example 1” in the publication, aluminum nitride powder (with a mean particle diameter of 1 μm) containing 1 weight percent of oxygen is mixed with 3 weight percent of samarium oxide to obtain mixed powder. The powder is then subjected to hot press at a pressure of 300 kg/cm² and a temperature of 1800 ° C. for 1 hour to obtain a sintered body with a heat conductivity of 121 W·m/k at room temperature.

[0008] Further, the applicant disclosed, in a U.S. Patent publication 2002-0110709A1, an aluminum nitride sintered body having a content of samarium of 0.04 mol percent or more so that the body has a samarium-aluminum oxide phase. The oxide phase is interconnected to result in a volume resistivity at room temperature of 10¹²Ω·cm or lower.

SUMMARY OF THE INVENTION

[0009] The effects of the addition of a rare earth element other than yttrium into an aluminum nitride sintered body on its volume resistivity was not studied, in the Japanese patent publication No. 9-315867A.

[0010] In the Japanese patent publication 63-46032A, a rare earth element is added to raw powder of aluminum nitride for improving the thermal conductivity of the resultant aluminum nitride sintered body. The effect of the addition on the volume resistivity of the sintered body was not studied. Further, in the Japanese patent publication 63-46032A, samarium oxide is added to raw material of aluminum nitride in a content of 3 weight percent calculated as samarium to obtain mixture, which is then hot pressed to obtain an aluminum nitride sintered body. The change of the volume resistivity of the sintered body due to the addition of samarium oxide was not studied.

[0011] According to the description in U.S. Patent publication 2002-0110709A1 disclosing the aluminum nitride sintered body, it is necessary that the body contains 0.04 mole percent or more of samarium calculated as samarium oxide, for attaining a volume resistivity at room temperature of about 10¹²Ω·cm. As the content of samarium is larger, the volume resistivity at room temperature is lower.

[0012] However, in an application for producing semiconductors such as a substrate for an electrostatic chuck, it is indispensable to eliminate the contamination of the semiconductors by metal elements. It is thus desirable to reduce the content of a heavy metal other than aluminum in the aluminum nitride sintered body as possible.

[0013] An object of the invention is to provide an aluminum nitride ceramics having a low volume resistivity at room temperature and a relatively low content of samarium.

[0014] The present invention provides an aluminum nitride ceramics comprising aluminum nitride as a main component and samarium in a converted content calculated as samarium oxide of 0.060 mole percent or lower, wherein aluminum nitride particles and samarium-aluminum composite oxide phase having a length of 7 μm or more are formed.

[0015] The inventors have studied an aluminum nitride ceramics containing samarium with a samarium-aluminum oxide phase. They have found that, in such ceramics, it is possible to reduce the volume resistivity at room temperature at a sufficiently low value, for example not higher than 10¹²Ω·cm provided that the samarium aluminum oxide phase is sufficiently grown to a length of 7 μm or more, even when the content of samarium is low. It is thus possible to provide an aluminum nitride ceramics having a relatively low content of samarium, reduced possibility of metal contamination and a sufficiently low volume resistivity at room temperature.

[0016] A U.S. Patent publication 2002-0110709A does not disclose a microstructure having the samarium-aluminum composite oxide phase of a length of 7 μm or longer formed with a such a small content of samarium.

[0017] The present invention further provides an aluminum nitride ceramics comprising aluminum nitride as a main component and samarium in a converted content calculated as samarium oxide of 0.060 mole percent or lower, wherein aluminum nitride particles having a mean particle diameter of 5 μm or more and samarium-aluminum composite oxide phase are formed.

[0018] The inventors have studied an aluminum nitride ceramics containing samarium with a samarium-aluminum composite oxide phase. They have found that, in such ceramics, it is possible to reduce the volume resistivity at room temperature at a sufficiently low value, for example 10¹²Ω·cm or lower, provided that the content of samarium is 0.025 mole percent or higher and 0.06 mole percent or lower. It is thus possible to provide an aluminum nitride ceramics having a relatively low content of samarium, reduced possibility of metal contamination and a sufficiently low volume resistivity at room temperature.

[0019] The present invention further provides an aluminum nitride ceramics comprising aluminum nitride as a main component and samarium in a converted content calculated as samarium oxide of 0.060 mole percent or lower, wherein aluminum nitride particles and samarium-aluminum composite oxide phase are formed. The ceramics is obtained by a sintering process at a maximum temperature of 1850° C. or higher.

[0020] The inventors have studied an aluminum nitride ceramics containing samarium for generating a samarium-aluminum composite oxide phase. Even when the content of samarium is low, it is proved that the volume resistivity at room temperature of the ceramics may be reduced to a low value, such as 10¹²Ω·cm or lower, by sufficiently elevating the maximum temperature during the sintering step to 1850° C. or higher. It is thus possible to provide an aluminum nitride ceramics having a relatively low content of samarium, reduced possibility of metal contamination and a sufficiently low volume resistivity at room temperature. Such high maximum temperature during the sintering step accelerates the growth of aluminum nitride particles and the samarium-aluminum composite oxide phase to help the formation of interconnected conductive path of the samarium-aluminum composite oxide phase.

[0021] These and other objects, features and advantages of the invention will be appreciated upon reading of the following description of the invention when taken in conjunction with the attached drawings, with the understanding that some modifications, variations and changes of the same could be easily made by the skilled person in the art.

BRIEF DESCRIPTION OF THE DRAWINGS

[0022]FIG. 1 is a photograph showing microstructure of a sintered body according to an example 1.

[0023]FIG. 2 is a photograph obtained by image processing of the photograph of FIG. 1.

[0024]FIG. 3 is a photograph (after image processing) showing microstructure of a sintered body according to an example 6.

[0025]FIG. 4 is a photograph obtained by image processing of the photograph of FIG. 3.

[0026]FIG. 5 is a photograph (after image processing) showing microstructure of a sintered body according to an example 13.

[0027]FIG. 6 is a photograph obtained by image processing of the photograph of FIG. 5.

[0028]FIG. 7 is a photograph (after image processing) showing microstructure of a sintered body according to an example 16.

[0029]FIG. 8 is a photograph obtained by image processing of the photograph of FIG. 7.

[0030]FIG. 9 is a photograph (after image processing) showing microstructure of a sintered body according to a comparative example 1.

[0031]FIG. 10 is a photograph obtained by image processing of the photograph of FIG. 9.

[0032]FIG. 11 is an X-ray diffraction profile of a sintered body according to an example 3.

[0033]FIG. 12 is an X-ray diffraction profile of a sintered body according to an example 12.

PREFERRED EMBODIMENTS OF THE INVENTION

[0034] The content of aluminum in the aluminum nitride sintered body should be enough for forming aluminum nitride particles as the main phase. The content may preferably be not lower than 35 weight percent, and more preferably be not lower than 50 weight percent, of the sintered body.

[0035] In a preferred embodiment of the present invention, the samarium-aluminum composite oxide phase forms network microstructure. In other words, the intergranular layers made of the samarium-aluminum composite oxide are formed along the interfaces (intergranular phase) between aluminum nitride grains. The intergranular layers surrounding two adjacent aluminum nitride particles are continuously formed. Such network microstructure may be confirmed by EPMA.

[0036] The content of carbon in the aluminum nitride ceramics according to the invention may preferably be not higher than 0.05 weight percent.

[0037] The relative density of the aluminum nitride ceramics may preferably be not lower than 95 percent.

[0038] For providing a sintered body suited for applications in which the contamination of impurities is to be highly controlled (such as an application for producing semiconductors), the total content of metal elements excluding aluminum and all the rare earth elements (including samarium) may preferably be not higher than 100 ppm, in some cases. The total content may more preferably be not higher than 50 ppm in some cases.

[0039] The samarium-aluminum composite oxide phase may preferably contain SmAl₁₁O₁₈ phase and most preferably does not contain SmAlO₃ phase or contains only a small amount of SmAlO₃ phase. The phases may be identified by means of an X-ray diffraction system using conditions described in “Examples” section referring to a phase diagram.

[0040] Preferably on the viewpoint, the samarium-aluminum composite oxide phase has a content of SmAlO₃ phase of 2 percent or lower calculated according to the following formula based on an X-ray diffraction profile. The content of SmAlO₃ phase may preferably be 1 percent or lower and more preferably be 0.5 percent or lower.

The content of SmAlO₃ phase=(integrated strength of the strongest peak of the SmAlO₃ phase/integrated strength of the strongest peak of the aluminum nitride phase)×100 percent

[0041] The ceramics according to the present embodiment has a low content of samarium and intergranular phase substantially composed of the conductive material as described above. The ceramics thus has a high purity and low volume resistivity.

[0042] In a preferred embodiment, the ceramics has a molar ratio of a converted content of samarium calculated as samarium oxide to a calculated content of aluminum oxide (Sm₂O₃/Al₂O₃) of 0.01 to 0.05. It is possible to further reduce the possibility of contamination of semiconductors by reducing the molar ratio of a converted content of samarium calculated as samarium oxide to a calculated content of aluminum oxide (Sm₂O₃/Al₂O₃). The molar ratio of a converted content of samarium calculated as samarium oxide to a calculated content of aluminum oxide (Sm₂O₃/Al₂O₃) may more preferably be 0.048 or lower.

[0043] A content of samarium in an aluminum nitride ceramics is analyzed and converted to a content of Sm₂O₃. The content of Al₂O₃ may be calculated by the following steps. First, total content of oxygen atoms in the sintered body is obtained. Second, the content of oxygen in Sm₂O₃ is subtracted from the total content of oxygen to obtain the content of remaining oxygen. The content of Al₂O₃ is calculated under the provision that all the remaining oxygen atoms are bonded with Al atoms to form Al₂O₃ molecules.

[0044] A second rare earth metal element other than samarium may be added into the aluminum nitride ceramics of the invention. It is considered that the second rare earth element is solid soluted into the samarium-aluminum composite oxide phase. However, the composite oxide phase of the second rare earth element and aluminum, for example Re₃Al₅O₁₂ phase (Re represents the second rare earth element), may be generated, depending on the formulation.

[0045] The second rare earth element other than samarium refers to the following sixteen elements; scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium.

[0046] Besides, aluminum nitride grains in the ceramics may preferably have a mean diameter of not lower than 5 μm and more preferably not lower than 6 μm on the viewpoint of the present invention. The upper limit of the mean particle diameter of the aluminum nitride grains is not particularly limited, and for example 20 μm.

[0047] The raw material of aluminum nitride may be produced by various processes, including direct reduction, reduction nitriding and gaseous phase synthesis from an alkyl aluminum.

[0048] Samarium oxide may be added to the raw material of aluminum nitride. Alternatively, a compound forming samarium oxide upon heating (a precursor of samarium oxide) may be added to the raw material of aluminum nitride. The precursor includes samarium nitrate, samarium sulfate and samarium oxalate. The precursor may be added as powder. Alternatively, a compound such as samarium nitrate or samarium sulfate may be dissolved into a solvent to obtain solution, which is then added to the raw material. It is possible to uniformly disperse samarium atoms between aluminum nitride particles, by dissolving the precursor of samarium oxide into a solvent.

[0049] The raw material may be shaped by any known methods including dry press, doctor blade, extrusion, casting and tape forming methods.

[0050] When the second rare earth element is added, the oxide of the second rare earth element may be added to the raw material of aluminum nitride. Alternatively, the compound of the rare earth element, including the nitrate, sulfate and alkoxide, may be dissolved into a solvent which may dissolve the compound. The thus obtained solution may be added to the raw material. It is thereby possible to uniformly disperse atoms of the second rare earth element in each region of the ceramics, even when an amount of the added rare earth element is very low.

[0051] In a formulating step, raw powder of aluminum nitride may be dispersed in a solvent, into which the rare earth element may be added in a form of powder of the rare earth oxide or the solution described above. In a mixing step, it is possible to simply agitate the formulation. When the raw powder contains aggregates, it is possible to use a mixing and grinding machine, such as a pot mill, trommel and attrition mill, for grinding the aggregates. When using an additive soluble in a solvent for grinding, it is enough to carry out the mixing and grinding step for a short (minimum) time required for the grinding the particles. Further, a binder component, such as polyvinyl alcohol, may be added.

[0052] The solvent used for the mixing step may be dried, preferably by spray dry method. After carrying out vacuum drying process, the particle distribution of the dried particles may preferably be adjusted by passing the particles through a mesh.

[0053] In a shaping step of the powdery material, the material may be pressed using a mold to provide a disk-shaped body. The pressure for pressing raw material is not particularly limited, as long as the shaped body may be handled without causing any fracture. The pressure may preferably be not lower than 100 kgf/cm². The powdery material may be supplied into a die for hot pressing without particularly shaping the powdery material.

[0054] In a preferred embodiment of the present invention, the inventive ceramics may be produced as follows. That is, a mixed powder containing a raw material of aluminum nitride, 0.3 weight percent or more and 0.5 weight percent or less of Sm₂O₃, and 0.9 weight percent or more of Al₂O₃ iS shaped to obtain a shaped body. The shaped body is then heated at a maximum temperature not lower than 1850° C. for 1 minutes to 4 hours. The temperature is raised in a rate of 50° C./hour to 1000° C./hours (preferably 300° C. or lower) at least in a temperature range of 1600° C. or higher.

[0055] The ceramics according to the invention may preferably be produced by hot pressing a body to be sintered, preferably at a pressure of not lower than 50 kgf/cm².

[0056] The maximum temperature during the sintering step may preferably be 1850° C. or higher, and more preferably be 1900° C. or higher, on the viewpoint of the present invention. The upper limit of the maximum temperature is not particularly defined, and may be 2200° C. for example.

[0057] The holding time at the maximum temperature during the sintering step is 1 minute or longer. The holding time may preferably be 0.5 hours or longer and more preferably be 2 hours or longer, for facilitating the formation of the conductive phase.

[0058] The cooling rate after the maximum temperature may preferably be 150° C./hr or higher, more preferably 450° C./hr or higher, and most preferably be 700° C./hr or higher. The reasons are as follows. As the cooling rate is larger, the residual potential remaining on the surface after a wafer is removed for an electrostatic chuck made of the inventive ceramics is smaller, and its rate of reduction is also high. For example, an electrostatic chuck was produced using a substrate made of the inventive ceramics produced through a cooling rate of 150° C./hr. A voltage of 500 volts was then applied on the chuck to adsorb a silicon wafer, which was then removed. A surface potential 3 minutes after removing the wafer was proved to be 49 volts and it took 50 seconds for reaching a surface potential of 0 volt. When the inventive ceramics produced through a cooling rate of 700° C./hr was used, a surface potential 3 minutes after removing the wafer was 42 volts and it took 20 seconds for reaching a surface potential of 0 volt. Further, the microstructure of the ceramics was observed. It was thus proved that the ceramics obtained through a cooling rate of 150° C./hr includes both regions having large and small amounts of the intergranular phase and the regions are unevenly dispersed. On the contrary, the ceramics obtained through a cooling rate of 700° C./hr had intergranular phase distributed uniformly over the whole of the ceramic microstructure. It is considered that such uniform distribution of the intergranular phase affects the rapid disappearance of the residual potential on the surface. Also in the ceramics obtained through a cooling rate of 450° C./hr, the intergranular phase was proved to be distributed uniformly over the whole of the ceramic microstructure.

[0059] The aluminum nitride ceramics of the present invention may preferably be used for various members in a system for producing semiconductors, such as systems for treating silicon wafers and for manufacturing liquid crystal displays.

[0060] A system for producing semiconductors means a system usable in a wide variety of semiconductor processing in which metal contamination of a semiconductor is to be avoided. Such system includes film forming, etching, cleaning and testing systems. The member for producing semiconductors using the ceramics according to the present invention means various members used for producing semiconductors, including a susceptor, ring, dome or the like. A resistance heating element, an electrode for an electrostatic chuck and an electrode for generating high-frequency wave may be embedded in the susceptor.

[0061] Further, the ceramics according to the present invention has a low resistivity and may be preferably used as a substrate for an electrostatic chuck. A heat resistor, an electrode for generating plasma or the like may be embedded, in addition to an electrode for electrostatic chuck in a substrate of the electrostatic chuck.

EXAMPLES

[0062] Aluminum nitride sintered bodies were produced as described below and the properties were evaluated.

[0063] (1) Production of Mixed Powder of Aluminum Nitride and Samarium Oxide

[0064] Commercial AlN raw powder produced by reduction nitriding was used. Commercial powder of samarium oxide with a purity of not lower than 99.9 percent and a mean particle diameter of 1.1 μm was used.

[0065] Each powder was weighed as shown in tables 1 and 4. Each weighed powder was then subjected to wet blending using isopropyl alcohol as a solvent, a nylon pot and nylon media for 4 hours to obtain slurry. After the blending, the slurry was collected and dried at 110° C. The thus dried powder was then subjected to heat treatment in an atmosphere at 450° C. for 5 hours to remove carbon content contaminated during the wet blending to produce raw mixed powder. In the columns of “ratio (mole %)” of the mixed powder, the ratios of AlN powder and Sm₂O₃ powder were calculated ignoring the contents of impurltles.

[0066] (2) Shaping and Sintering Steps

[0067] Each mixed powder obtained in (1) was then shaped by means of uniaxial pressing at a pressure of 200 kgf/cm² to obtain a disk-shaped body with a diameter of 100 mm or 50 mm and a thickness of 20 mm, which was then contained within a mold made of graphite for sintering.

[0068] Each shaped body was sintered by hot pressing at a pressure of 200 kgf/cm². During the sintering, the shaped body was set in vacuum from room temperature to 1000° C. (1550° C. in some cases) and then nitrogen gas was introduced at a pressure of 1.5 kgf/cm² from 1000° C. (or 1550 ° C.) to each sintering (maximum) temperature. The maximum temperature was changed as shown in tables 1 and 3. Each holding time at each maximum temperature was 1 minute to 4 hours.

[0069] (3) Evaluation

[0070] The thus obtained sintered bodies were processed and then subjected to the following evaluations.

[0071] (Content of Sm₂O₃)

[0072] The content of Sm is determined by inductively coupled plasma (ICP) spectrometry and then converted to the content of Sm₂O₃.

[0073] (Content of Al₂O₃)

[0074] The total content of oxygen in the sintered body is obtained. The oxygen content in Sm₂O₃ is then subtracted from the total content of oxygen to calculate the remaining oxygen. The content of Al₂O₃ is calculated under the provision that all the remaining oxygen atoms constitute Al₂O₃.

[0075] (Molar Ratio: Sm₂O₃/Al₂O₃)

[0076] It is calculated from the contents of Sm₂O₃ and Al₂O₃ obtained above.

[0077] (Oxygen Content)

[0078] It is determined by inert gas melting infrared absorptiometry analysis method.

[0079] (Content of TiN)

[0080] The content of Ti is determined by ICP spectrometry and then converted to the content of TiN.

[0081] (Content of MgO)

[0082] The content of Mg is determined by ICP spectrometry and then converted to the content of MgO.

[0083] (Density, Open Porosity)

[0084] They are measured by Archimedes method using water as a medium.

[0085] (Composition of Sintered Body)

[0086] The contents of Sm₂O₃, Al₂O₃, TiN and MgO calculated as described above are subtracted from 100 mole percent to provide the content of AlN. This calculation is performed under the provision that total of the contents of AlN, Sm₂O₃, Al₂O₃, TiN and MgO is 100 mole percent.

[0087] (Volume Resistivity)

[0088] It is measured by a method according to “JIS C 2141” from room temperature to about 400° C. under vacuum. The test sample has the following parts: a plate with ø50 mm×1 mm or 50 mm×50mm×1 mm; a main electrode with a diameter of 20 mm; a guard electrode with an inner diameter of 30 mm and outer diameter of 40 mm; and an applying electrode with a diameter of 40 mm. The electrodes are formed of silver. 500 V/mm of voltage is applied and a current is read one minute after the application of voltage so that the volume resistivity is calculated.

[0089] (Thermal Conductivity)

[0090] It is measured by laser flash method.

[0091] )Mean Grain Diameter of AlN Grains)

[0092] The sintered body is polished to form a polished surface, which is observed by an electron microscope to determine grain diameter values at 30 points in a visual field. The average of the 30 values is calculated.

[0093] (Crystalline Phase)

[0094] It is determined by using a rotating anode type X-ray diffraction system “RINT” supplied by “Rigaku Denki” under the following condition: CuKα, 50 kV, 300 mA, and 2θ=10 to 70°.

[0095] (Identification and Measurement of Peak Strength of SmAl₁₁O₁₈ Phase)

[0096] One peak (2θ=18.8°) of SmAl₁₁O₁₈ phase not overlapping with the other crystalline peaks, (110) peak of SmAlO₃ phase and (200) peak of AlN phase are subjected to profile fitting by means of Pseudo-Voigt function to obtain the integrated strengths of the peaks.

[0097] Since the strongest peaks of SmAl₁₁O₁₈, SmAlO₃ and AlN phases overlap the other peaks, each integrated strength of each strongest peak is calculated as follows.

[0098] (Calculation of Integrated Strength of the Strongest Peak of SmAlO₃ Phase)

[0099] It is calculated based on the ratio of the strengths of the strongest peak (112) and the above reference peak (110) referring to JCPDS cards.

[0100] (Calculation of Integrated Strength of the Strongest Peak of AlN Phase)

[0101] It is calculated based on the ratio of the strengths of the strongest peak (100) and the above reference peak (200) referring to JCPDS cards.

[0102] (Calculation of Integrated Strength of the Strongest Peak of SmAl₁₁O₁₈ Phase)

[0103] Although the presence of the SmAl₁₁O₁₈ phase is confirmed in a phase diagram, the corresponding JCPDS card is not presented. Sml₁₁O₁₈ is produced from Sm₂O₃ and Al₂O₃ and the peak profile is measured using an X-ray diffraction system. The strength of the strongest peak of the SmAl₁₁O₁₈ phase (2θ=about 34°) and that of a reference peak (2θ=18.8°) are calculated. The ratio of the strengths was used to calculate the strength of the strongest peak in each AlN sintered body.

[0104] Further, in each of the sintered bodies, the contents of SmAl₁₁O₁₈ and SmAlO₃ phases are low, so that they are not detectable by means of an X ray diffraction analysis under the same measuring condition as the AlN phase. The counting time for counting X-ray was made 10 times longer than that for measuring the AlN phase. In other words, the counting time for the AlN phase was {fraction (1/10)} of that for measuring the SmAl₁₁O₁₈ and SmAlO₃ phases. The measured strength of the AlN phase was thus multiplied by 10 times (it was shown as “converted amount” in the tables.).

[0105] (Length of Samarium-Aluminum Composite Oxide Phase)

[0106] A software “ImageProPlus (Ver4.5)” supplied by Pranetron Inc. is used.

[0107] Each command name in the software in the following procedure is specified using a parenthesis.

[0108] (1) An image file of the cross section of AlN is obtained at a magnitude of 3000. An area of 40×25 μm or more is obtained in a resolution of □0.56 μm/l pixel as a gray scale image.

[0109] (2) A portion (712×465 pixels) is cut out from the measured area and then subjected to “5×5 gauss” filter twice to remove small noises.

[0110] (3) A small region of □75 to 100 pixels considered to be AlN was cut out and “histogram is shown” on the grayscale value to obtain the average and standard deviation.

[0111] (4) When an extremely bright region which is not counted as the intergranular phase is observed, “histogram is shown” to confirm the distribution on grayscale.

[0112] (5) The image was then subjected to “binarization” based on upper and lower values. The upper value is set at the average value in (3)+10 (0.5≦α≦1.0), 20 (1.0≦α≦1.5), or 30 (1.5≦α≦2.0), and the upper value is set at the lowest of the distribution in (4).

[0113] (6) The white portions in the binarized image obtained in (5) is assigned as the intergranular phase. The center line is extracted from the binarized image using “thinning” filter.

[0114] (7) The thus extracted center lines are subjected to “count/size” processing to measure “length of branch” of the center line. The length of branch is defined as the “length of center line”. When the center line has a plurality of branched/merged portions, the image was subjected to “branch/end point” filter to extract only the “branches” and “end points”. At each branched portion, longer branches are selected so that the “length of branch” is made longer as possible. The thus obtained total length of the branch is applied as the length of center line. When the center line is ring or loop shaped, the circumferential length of the loop is measured to obtain the length of center line. The outline of the region extracted in (4) was removed from the object for counting using “remove the object” command.

[0115] (8) The maximum of the obtained lengths of center lines is selected and multiplied with a resolution per one pixel (0.57 μm/pixel) to obtain the length of intergranular phase of the object for evaluation.

[0116] (Lattice Parameter)

[0117] An XRD profile was obtained using an X-ray diffraction system, and then processed using WPPF (Whole-Powder-Pattern Fitting) program to calculate a lattice parameter .

[0118] Specifically, the sintered bodies according to the above examples are ground to obtain powder, which is then mixed with Al₂O₃ powder having a known lattice constant as an internal standard in a ratio of 1:1 to obtain mixed powder. CuKβ ray is removed by means of a monochrometer from CuKα ray, which is then irradiated onto each sample (mixed powder) to measure the profile. The measurement is carried out the following condition: 50 kV, 300 mA, and 2θ=30 to 120°, a rotating anode type X-ray diffraction system “RINT-2000 series” supplied by “Rigaku Denki”.

[0119] Further, a program “WPPF” attached as an option was used to carry our profile fitting to obtain a lattice parameter . It is possible to carry out precise calculation based on the lattice parameter of an internal standard and an approximation of the lattice parameter of AlN by means of the “WPPF” program.

[0120] Specifically, “WPPF” is activated and an area for fitting (2θ) is specified from the measured profile. Thereafter, semi-automatic fitting is carried out first and then manual fitting is followed. The approximation in the manual fitting process is performed as follows. The background strength, peak strength, lattice parameter, half value width, asymmetrical parameter of the peak, damping factor of the strength of profile on the side of lower angle, and damping factor of the strength of profile on the side of higher angle are subjected to the precise calculation for each parameter. “Fixed” or “Valuable” is selected before each of the precise calculations. The precise calculation is performed until the calculated profile and measured profile are made identical with each other (Rwp (standard deviation)=0.1 or lower). A reliable lattice parameter can be obtained by means of the precise calculation.

[0121] The “WPPF” is described in detail in the following document.

[0122] “H. Toraya, “Whole-Powder-Pattern Fitting Without Reference to a Structural Model: Application to X-ray Powder Diffractometer Data”, J. Appl. Cryst. 19, 440-447(1986)” TABLE 1 raw powder sintering condition AlN powder temperature temperature chemical anaysis data oxygen maximum ascending holding descending Sm O Ti Mg C content Sm2O3 temperature rate time rate content content content content content wt % mol % ° C. ° C./hr hr ° C./hr wt % wt % wt % wt % wt % example 1 0.87 0.035 1900 1000 4 300 0.23 1.11 0.00 0.00 0.027 example 2 0.87 0.035 1900 1000 4 300 0.23 1.15 0.03 0.00 0.026 example 3 0.87 0.035 1900 1000 4 300 0.23 1.12 0.00 0.00 0.026 example 4 0.87 0.035 2000 1000 4 300 0.24 1.00 0.00 0.00 0.027 example 5 0.87 0.035 2000 1000 4 300 0.23 1.11 0.03 0.00 0.028 example 6 0.87 0.035 2000 1000 4 300 0.26 1.08 0.00 0.00 0.027 example 7 0.87 0.046 1850 50 2 150 0.35 1.40 0.00 0.05 0.031 example 8 0.87 0.046 1850 50 2 150 0.36 1.30 0.13 0.02 0.038 example 9 0.87 0.046 1900 1000 4 300 0.32 1.37 0.13 0.00 0.039 example 10 0.87 0.046 1900 1000 4 300 0.34 1.39 0.00 0.02 0.032 example 11 0.87 0.046 1900 1000 4 300 0.35 1.26 0.13 0.02 0.038 example 12 0.87 0.059 1900 1000 4 300 0.39 1.37 0.00 0.00 0.029

[0123] TABLE 2 Sm2O3 Al2O3 TiN MgO length converted converted Sm2O3/ converted converted intergranular open content content Al2O3 content content phase porosity mol % mol % mol π mol % mol % mm % example 1 0.032 0.931 0.034 0.00 0.00 23 0.01 example 2 0.032 0.967 0.033 0.02 0.00 19 0.02 example 3 0.032 0.940 0.034 0.00 0.00 27 0.01 example 4 0.029 0.837 0.035 0.00 0.00 17 0.01 example 5 0.028 0.935 0.030 0.02 0.00 11 0.01 example 6 0.030 0.906 0.034 0.00 0.00 20 0.02 example 7 0.049 1.146 0.043 0.00 0.02 25 0.01 example 8 0.050 1.120 0.045 0.09 0.02 31 0.00 example 9 0.045 1.149 0.039 0.09 0.00 13 0.00 example 10 0.047 1.146 0.041 0.00 0.02 12 0.00 example 11 0.049 1.042 0.047 0.09 0.02 30 0.02 example 12 0.054 1.140 0.048 0.00 0.00 18 0.02 mean grain bulk volume Thermal diameter density resistivity conductivity of AlN crystal linephases g/cm3 Ω · cm W/mK μm (other than AlN phases) example 1 3.26 3.1E+11 81 6 SmAl11O18, Al5O6N example 2 3.26 2.8E+11 80 5 SmAl11O18, Al5O6N example 3 3.26 2.9E+11 81 6 SmAl11O18, Al5O6N example 4 3.27 7.2E+10 74 10 SmAl11O18, SmAlO3, Al5O6N example 5 3.26 1.0E+11 75 10 same as above example 6 3.25 6.1E+10 75 11 same as above example 7 3.27 9.4E+10 81 5 same as above example 8 3.27 1.6E+11 80 5 same as above example 9 3.27 1.3E+11 78 5 SmAl11O18, Al5O6N example 10 3.27 1.6E+11 78 5 SmAl11O18, SmAlO3, Al5O6N example 11 3.27 8.9E+10 77 5 same as above example 12 3.27 9.9E+10 81 5 SmAl11O18, Al5O6N

[0124] TABLE 3 XRD SmAl11O18 SmAlO3/ the AlN AlN (%) 2 θ = strongest SmAlO3 converted (112)/ lattice parameter 18.8° peak (110) (112) (200) (100) amount* (100) a( Å) c( Å) example 1 567.5 2101.9 0.0 0.0 1299.0 25980.5 259805.4 0.0 3.11145 4.97909 example 2 553.3 2049.4 0.0 0.0 1330.3 26606.3 266063.4 0.0 3.11138 4.97922 example 3 580.2 2148.9 0.0 0.0 1364.7 27293.3 272933.4 0.0 3.11149 4.97893 example 4 257.5 953.7 398.7 643.0 1356.2 27123.9 271239.0 0.2 3.11140 4.97911 example 5 394.8 1462.2 119.1 192.1 1374.0 27480.9 274809.4 0.1 3.11141 4.97913 example 6 515.9 1910.7 166.9 269.2 1354.2 27084.1 270841.0 0.1 3.11135 4.97918 example 7 725.8 2688.1 385.4 621.6 1356.6 27132.1 271321.0 0.2 3.11149 4.97939 example 8 750.4 2779.3 498.8 804.4 1387.6 27752.1 277521.0 0.3 — — example 9 808.7 2995.0 0.0 0.0 1351.9 27038.8 270388.2 0.0 3.11148 4.97892 example 10 695.7 2576.5 405.3 653.8 1378.9 27578.8 275788.2 0.2 3.11151 4.97912 example 11 720.2 2667.5 533.6 860.6 1287.0 25740.8 257408.0 0.3 3.11141 4.97922 example 12 1225.2 4537.7 0.0 0.0 1308.6 26172.0 261720.0 0.0 3.11139 4.97877

[0125] TABLE 4 raw powder sintering condition AlN powder temperature temperature chemical anaysis data oxygen maximum ascending holding descending Sm O Ti Mg C content Sm2O3 temperature rate time rate content content content content content wt % mol % ° C. ° C./hr hr ° C./hr wt % wt % wt % wt % wt % example 13 0.87 0.046 1900 50 2 150 0.34 1.46 0.13 0.00 0.036 example 14 0.87 0.046 1900 50 2 150 0.39 1.39 0.00 0.05 0.026 example 15 0.87 0.046 1900 50 2 150 0.32 1.15 0.13 0.02 0.031 example 16 0.87 0.059 1900 50 2 150 0.46 1.50 0.00 0.00 0.025 example 17 0.87 0.046 1900 50 2 150 0.30 1.22 0.10 0.01 0.026 example 18 0.87 0.046 1900 50 1 min. 150 0.30 1.21 0.10 0.01 0.033 example 19 0.87 0.046 1900 50   0.5 150 0.34 1.19 0.10 0.01 0.027 example 20 0.87 0.046 1900 50 2 700 0.31 1.16 0.10 0.01 0.028 example 21 0.87 0.046 1900 1000 4 350 0.28 1.15 0.10 0.01 0.033 comparative 0.97 0.020 1800 1000 4 300 0.16 0.80 0.00 0.00 0.031 example 1 comparative 0.87 0.230 1800 1000 4 300 1.43 1.06 0.00 0.00 0.030 example 2 comparative 0.87 0.120 1800 1000 4 300 0.70 0.85 0.00 0.00 0.030 example 3

[0126] TABLE 5 Sm2O3 Al2O3 TiN MgO length converted converted Sm2O3/ Converted converted intergranular open content content Al2O3 content content phase porosity mol % mol % mol π mol % mol % mm % example 13 0.040 1.233 0.033 0.09 0.00 37 0.04 example 14 0.047 1.146 0.041 0.00 0.05 27 0.02 example 15 0.039 0.955 0.041 0.09 0.02 28 0.02 example 16 0.056 1.254 0.044 0.00 0.00 24 0.00 example 17 0.042 1.014 0.041 0.09 0.01 32 0.01 example 18 0.042 1.005 0.041 0.09 0.02 39 0.00 example 19 0.047 0.983 0.048 0.09 0.01 37 0.00 example 20 0.043 0.960 0.045 0.09 0.01 25 0.00 example 21 0.039 0.955 0.041 0.09 0.02 27 0.01 comparative 0.022 0.669 0.033 0.00 0.00 4 0.04 example 1 comparative 0.200 0.729 0.274 0.00 0.00 14 0.02 example 2 comparative 0.097 0.641 0.151 0.00 0.00 12 0.04 example 3 mean grain bulk volume Thermal diameter density resistivity conductivity of AlN crystal linephases g/cm3 Ω · cm W/mK μm (other than AlN phases) example 13 3.27 5.3E+10 83 6 SmAl11O18, SmAlO3 Al5O6N example 14 3.27 6.9E+10 82 6 same as above example 15 3.27 6.6E+10 80 5 same as above example 16 3.27 4.4E+10 83 6 same as above example 17 3.26 5.0E+10 79 6 same as above example 18 3.26 6.8E+10 80 5 same as above example 19 3.28 5.8E+10 79 5 same as above example 20 3.27 8.1E+10 79 5 SmAl11O18, Al5O6N example 21 3.27 2.2E+11 75 5 SmAl11O18, SmAlO3 Al5O6N comparative 3.26 4.0E+15 96 4 SmAl11O18 example 1 comparative 3.30 3.0E+11 105 4 SmAl11O18, SmAlO3 example 2 comparative 3.28 2.0E+11 98 4 same as above example 3

[0127] TABLE 6 XRD SmAl11O18 SmAlO3/ the AlN AlN (%) 2 θ = strongest SmAlO3 converted (112)/ lattice parameter 18.8° peak (100) (112) (200) (100) amount* (100) a( Å) c( Å) example 13 678.3 2512.3 184.6 297.7 1282.9 25657.8 256578.4 0.1 3.11149 4.97912 example 14 747.3 2767.6 238.4 384.5 1296.5 25930.4 259304.2 0.1 3.11145 4.97929 example 15 690.4 2557.0 244.9 395.0 1288.7 25774.0 257740.0 0.2 3.11142 4.97930 example 16 1000.8 3706.6 227.7 367.3 1287.1 25741.4 257413.6 0.1 3.11149 4.97929 example 17 902.2 3341.6 302.2 487.5 1353.2 27063.1 270631.4 0.2 3.11147 4.97970 example 18 753.2 2789.7 209.1 337.2 1328.8 26575.9 265759.4 0.1 3.11148 4.97942 example 19 665.9 2466.2 313.3 505.3 1226.8 24536.6 245366.2 0.2 3.11146 4.97945 example 20 899.9 3332.9 0.0 0.0 1232.1 24641.8 246417.8 0.0 3.11150 4.97951 example 21 714.9 2647.9 501.9 809.5 1456.9 29138.5 291384.6 0.3 3.11148 4.97905 comparative 553.4 2049.6 0.0 0.0 1328.1 26562.0 265620.0 0.0 3.11161 4.97920 example 1 comparative 234.1 867.0 8249.5 13305.6 1298.5 25970.0 259700.0 5.1 3.11162 4.97938 example 2 comparative 258.5 957.5 4334.6 6991.4 1238.3 24765.4 247654.0 2.8 3.11164 4.97965 example 3

[0128] The results of the evaluations will be described for each example.

Example 1 Tables 1, 2 and 3

[0129] The AlN raw powder with 0.035 mole percent of Sm₂O₃ added was sintered at 1900° C. to provide a dense body with a density of 3.26 g/cm³ and an open porosity of 0.01 percent. The converted content of Sm₂O₃ was 0.032 mole percent. A ratio of the converted content of Sm calculated as Sm₂O₃ to a calculated content of aluminum oxide (Sm₂O₃ /Al₂O₃) (molar ratio) was 0.034. The mean grain diameter of aluminum nitride particles was 6 μm, and SmAlO₃/AlN (ratio of peak strengths) was 0.0 percent. The volume resistivity was 3.1×10¹¹Ω·cm at room temperature (25° C.). In table 2, “3.1×10¹¹” was represented as “3.1E+11”. The same method of representation is applied in the above tables.

[0130]FIG. 1 is a photograph showing the microstructure of the sintered body according to the example 1 (taken by a magnitude of 3000). FIG. 2 is a photograph obtained by the image processing of the photograph shown in FIG. 1. The blackish portions on the contrast were identified as aluminum nitride particles and whitish portions were identified as intergranular phase. The length of the intergranular phase proved to be 23 μm. The intergranular phase was substantially and three-dimensionally interconnected to form a kind of network microstructure.

Examples 2 to 10 Tables 1, 2 and 3

[0131] In the example 2, the AlN raw powder with 0.035 mole percent of Sm₂O₃ added was sintered at 1900° C. to provide a dense body with a density of 3.26 g/cm³. The converted content of Sm₂O₃ was 0.032 mole percent. A molar ratio of the converted content of Sm calculated as Sm₂O₃ to a calculated content of aluminum oxide (Sm₂O₃/Al₂O₃) was 0.033. The mean grain diameter of aluminum nitride particles was 5 μm, and SmAlO₃/AlN (ratio of peak strengths) was 0.0 percent. The volume resistivity was 2.8×10¹¹Ω·cm at room temperature (25° C.). The length of the intergranular phase proved to be 19 μm. The intergranular phase was substantially and three-dimensionally interconnected to form a kind of network microstructure.

[0132] In the example 3, the AlN raw powder with 0.035 mole percent of Sm₂O₃ added was sintered at 1900° C. to provide a dense body with a density of 3.26 g /cm³. The converted content of Sm₂O₃ was 0.032 mole percent. A molar ratio of the converted content of Sm calculated as Sm₂O₃ to a calculated content of aluminum oxide (Sm₂O₃/Al₂O₃) was 0.034. The mean grain diameter of aluminum nitride particles was 6 μm, and SmAlO₃/AlN (ratio of peak strengths) was 0.0 percent. The volume resistivity was 2.9×10¹¹Ω·cm at room temperature (25° C.). The length of the intergranular phase proved to be 27 μm. The intergranular phase were substantially and three-dimensionally interconnected to form a kind of network microstructure.

[0133]FIG. 11 is an X-ray diffraction profile of the sintered body according to the example 3, in which an enlarged view (by 20 times) of a range of 2θ=10 to 30° is also shown. A peak of SmAlO₃ phase is not identified and the intergranular phase is substantially composed of only SmAl₁₁O₁₈ phase. A JCPDS card corresponding to SmAl₁O₁₈ phase is not present, and the JCPDS card of CeAl₁₁O₁₈ is used as a substitute to identify its peaks. That is, as shown in FIG. 11, peak positions corresponding to crystalline phases other than AlN phase (JCPDS No. 25-1133) are substantially identical with those of CeAl₁₁O₁₈ phase (JCPDS card No. 48-0055). The secondary phase was thus identified as SmAl₁₁O₁₈ phase having the same crystalline structure as CeAl₁₁O₁₈ phase. The presence of SmAl₁₁O₁₈ phase is confirmed in a phase diagram of Sm₂O₃-Al₂O₃ system (Phase Diagrams for Ceramists 1975 Supplement, FIG. 4369)∘

[0134] In the examples 4 to 12, the converted amount of Sm₂O₃ in the sintered body was 0.028 to 0.054 mole percent and the ratio of the converted content of Sm calculated as Sm₂O₃ to the converted content of aluminum oxide (Sm₂O₃/Al₂O₃) was 0.030 to 0.048. The mean grain diameter of aluminum nitride particles was 5 μm or more, and SmAlO₃/AlN (ratio of peak strengths) was less than 0.3 percent. The volume resistivity was 1.6×10¹¹Ω·cm or lower at room temperature (25° C.). The length of the intergranular phase proved to be 11 to 31 μm. The intergranular phase was substantially and three-dimensionally interconnected to form a kind of network microstructure.

[0135]FIG. 3 is a photograph showing the microstructure of the sintered body according to the example 6 (taken by a magnitude of 3000). FIG. 4 is a photograph obtained by the image processing of the photograph shown in FIG. 3. FIG. 12 is an X-ray diffraction profile of the sintered body according to the example 12, in which an enlarged view (by 20 times) of a range of 2θ=10 to 30° is also shown. A peak of SmAlO₃ phase is not identified and the intergranular phase is substantially composed of only SmAl₁₁O₁₈ phase.

Examples 13 to 21 Tables 4, 5 and 6

[0136] Also in the examples 13 to 21, the converted amount of Sm₂O₃ in the sintered body was 0.039 to 0.056 mole percent and the ratio of the converted content of Sm calculated as Sm₂O₃ to a converted content of aluminum oxide (Sm₂O₃/Al₂O₃) (molar ratio) was 0.033 to 0.048. The mean grain diameter of aluminum nitride particles was 5 or 6 μm, and SmAlO₃/AlN (ratio of peak strengths) was 0.2 percent or lower. The volume resistivity was 6.9×10¹⁰ Ω·cm or lower at room temperature (25° C.). The length of the intergranular phase proved to be 24 to 37 μm. The intergranular phase were substantially and three-dimensionally interconnected to form a kind of network microstructure.

[0137]FIG. 5 is a photograph showing the microstructure of the sintered body according to the example 11 (taken by a magnitude of 3000). FIG. 6 is a photograph obtained by the image processing of the photograph of FIG. 5. FIG. 7 is a photograph showing the microstructure of the sintered body according to the example 14 (taken by a magnitude of 3000). FIG. 8 is a photograph obtained by the image processing of the photograph of FIG. 7.

Comparative Examples 1 to 3 Tables 4, 5 and 6

[0138] In the comparative example 1, AlN raw powder with 0.020 mole percent of Sm₂O₃ added was sintered at 1800° C. to provide a dense body with a density of 3.26 g/cm³ and an open porosity of 0.04 percent. The converted content of Sm₂O₃ was 0.022 mole percent. A ratio of the converted content of Sm calculated as Sm₂O₃ to a calculated content of aluminum oxide (Sm₂O₃/Al₂O₃) (molar ratio) was 0.033. The mean grain diameter of aluminum nitride particles was 4 μm, and SmAlO₃/AlN (ratio of peak strengths) was 0.0 percent. The volume resistivity was 4.0×10¹⁵Ω·cm at room temperature (25° C.).

[0139]FIG. 9 is a photograph showing the microstructure of the sintered body according to the comparative example 1 (taken by a magnitude of 3000). FIG. 10 is a photograph obtained by the image processing of the photograph shown in FIG. 9. The intergranular phase is isolated and does not have an elongate shape or pattern so that the intergranular phase was not continuously and three-dimensionally interconnected. The length of the intergranular phase was 4 μm.

[0140] In the comparative example 2, the converted content of Sm₂O₃ was 0.200 mole percent and larger than those in the inventive examples. A ratio of the converted content of Sm calculated as Sm₂O₃ to a calculated content of aluminum oxide (Sm₂O₃/Al₂O₃) was 0.274. The mean grain diameter of aluminum nitride particles was 4 μm, and SmAlO₃/AlN (ratio of peak strengths) was 5.1 percent. The volume resistivity was as low as 3.0×10¹¹Ω·cm at room temperature (25° C.). In the comparative example 2, the content of Sm₂O₃ is large, so that this example is out of the present invention intended for reducing the volume resistivity at a low content of Sm₂O₃.

[0141] In the comparative example 3, the converted content of Sm₂O₃ was 0.097 mole percent, which is larger that those in the inventive examples. In the comparative example 3, the mean grain diameter of aluminum nitride particles was 4 μm, and SmAlO₃/AlN (ratio of peak strengths) was 2.8 percent. The volume resistivity was as low as 2.0×10¹¹Ω·cm at room temperature (25° C.). The length of the intergranular phase was 12 μm. The content of Sm₂O₃ was also large also in the comparative example 3.

[0142] As described above, the present invention provides an aluminum nitride ceramics having a low volume resistivity at room temperature and a relatively low content of samarium.

[0143] The present invention has been explained referring to the preferred embodiments, however, the present invention is not limited to the illustrated embodiments which are given by way of examples only, and may be carried out in various modes without departing from the scope of the invention. 

1. An aluminum nitride ceramics comprising aluminum nitride as a main component and samarium in a converted content calculated as samarium oxide of not higher than 0.060 mole percent, wherein aluminum nitride particles and samarium-aluminum composite oxide phase having a length of 7 micrometer or more are formed.
 2. The ceramics of claim 1, having a volume resistivity at room temperature of 1×10¹²Ω·cm or lower.
 3. The ceramics of claim 1, wherein said samarium-aluminum composite oxide phase includes SmAl₁₁O₁₈ phase.
 4. The ceramics of claim 3, having a molar ratio of said converted content of samarium calculated as samarium oxide to a calculated content of aluminum oxide (Sm₂O₃/Al₂O₃) of 0.01 to 0.05.
 5. The ceramics of claim 1, wherein said samarium-aluminum composite oxide phase has a content of SmAlO3 phase of 2 percent or lower calculated according to the following formula based on an X-ray diffraction profile. Said content of SmAlO₃ phase=(integrated strength of the strongest peak of said SmAlO₃ phase/integrated strength of the strongest peak of said aluminum nitride phase)×100 percent
 6. The ceramics of claim 1, wherein said samarium-aluminum composite oxide phase forms network microstructure.
 7. The ceramics of claim 1, containing samarium in a converted content calculated as samarium oxide of 0.025 mole percent or higher.
 8. The ceramics of claim 1, wherein said aluminum nitride particles have a mean particle diameter of 5 μm or more.
 9. A member used for producing semiconductors, comprising said aluminum nitride ceramics of claim
 1. 10. An aluminum nitride ceramics comprising aluminum nitride as a main component and samarium in a converted content calculated as samarium oxide of 0.060 mole percent or lower and 0.025 mole percent or higher, wherein aluminum nitride particles and samarium-aluminum composite oxide phase are formed.
 11. The ceramics of claim 10, having a volume resistivity at room temperature of 1×10¹²Ω·cm or lower.
 12. The ceramics of claim 10, wherein said samarium-aluminum composite oxide phase includes SmAl₁₁O₁₈ phase.
 13. The ceramics of claim 10, wherein said samarium-aluminum composite oxide phase has a content of SmAlO₃ phase of 2 percent or lower calculated according to the following formula based on an X-ray diffraction profile. Said content of SmAlO₃ phase=(integrated strength of the strongest peak of said SmAlO₃ phase/integrated strength of the strongest peak of said aluminum nitride phase)×100 percent
 14. The ceramics of claim 10, comprising a molar ratio of said converted content of samarium calculated as samarium oxide to a calculated content of aluminum oxide (Sm₂O₃/Al₂O₃) of 0.01 to 0.05.
 15. The ceramics of claim 10, wherein said samarium-aluminum composite oxide phase forms network microstructure.
 16. A member used for producing semiconductors, comprising said aluminum nitride ceramics of claim
 10. 17. An aluminum nitride ceramics comprising aluminum nitride as a main component and samarium in a converted content calculated as samarium oxide of 0.060 mole percent or lower, wherein aluminum nitride particles having a mean particle diameter of 5 μm or more and samarium-aluminum composite oxide phase are formed.
 18. The ceramics of claim 17, having a volume resistivity at room temperature of 1×10¹²Ω·cm or lower.
 19. The ceramics of claim 17, wherein said samarium-aluminum composite oxide phase includes SmAlO₃ phase.
 20. The ceramics of claim 17, wherein said samarium-aluminum composite oxide phase has a content of SmAlO₃ phase of 2 percent or lower calculated according to the following formula based on an X-ray diffraction profile. Said content of SmAlO₃ phase=(integrated strength of the strongest peak of said SmAlO₃ phase/integrated strength of the strongest peak of said aluminum nitride phase)×100 percent
 21. The ceramics of claim 17, comprising a molar ratio of said converted content of samarium calculated as samarium oxide to a calculated content of aluminum oxide (Sm₂O₃/Al₂O₃) of 0.01 to 0.05.
 22. The ceramics of claim 17, wherein said samarium-aluminum composite oxide phase forms network microstructure.
 23. A member used for producing semiconductors, comprising said aluminum nitride ceramics of claim
 17. 24. An aluminum nitride ceramics comprising aluminum nitride as a main component and samarium in a converted content calculated as samarium oxide of 0.060 mole percent or lower, wherein aluminum nitride particles and samarium-aluminum composite oxide phase are formed, said ceramics being obtained by a sintering process at a maximum temperature of 1850° C. or higher.
 25. The ceramics of claim 24, having a volume resistivity at room temperature of 1×10¹²Ω·cm or lower.
 26. The ceramics of claim 24, wherein said samarium-aluminum composite oxide phase has a length of 7 μm or more.
 27. The ceramics of claim 24, wherein said aluminum nitride particles have a mean grain diameter of 5 μm or more.
 28. The ceramics of claim 24, wherein said samarium-aluminum composite oxide phase includes SmAl₁₁O₁₈ phase.
 29. The ceramics of claim 24, wherein said samarium-aluminum composite oxide phase has a content of SmAlO₃ phase of 2 percent or lower calculated according to the following formula based on an X-ray diffraction profile. Said content of SmAlO₃phase=(integrated strength of the strongest peak of said SmAlO₃ phase/integrated strength of the strongest peak of said aluminum nitride phase)×100 percent.
 30. The ceramics of claim 24, comprising a molar ratio of said converted content of samarium calculated as samarium oxide to an calculated content of aluminum oxide (Sm₂O₃/Al₂O₃) of 0.01 to 0.05.
 31. The ceramics of claim 24, wherein said samarium-aluminum oxide phase forms network microstructure.
 32. A member used for producing semiconductors, comprising said aluminum nitride ceramics of claim
 24. 33. A method of producing an aluminum nitride sintered body: said method comprising the steps of; shaping a mixed powder containing a raw material of aluminum nitride, 0.3 weight percent or more and 0.5 weight percent or less of Sm₂O₃, and 0.9 weight percent or more of Al₂O₃ to obtain a shaped body; raising the temperature of said shaped body to a maximum temperature in a rate of 50° C./hour to 1000° C./hours at least in a temperature range of 1600° C. or higher; and sintering said shaped body in a temperature range of 1850° C. or higher for 0.5 hours to 4 hours.
 34. The method of claim 33, wherein said shaped body is sintered by hot pressing.
 35. The method of claim 33, further comprising the step of cooling said sintered body after said sintering step in a rate of 450° C./hr. 